Thousand Oaks, CA, United States of America

Stanley W Zehr

This inventor holds 1 USPTO granted patent. Top assignee: Rockwell International Corporation. Active years: 1991.


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1991

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1 patent (USPTO):Explore Patents

Title: The Innovations of Stanley W. Zehr

Introduction

Stanley W. Zehr is a notable inventor based in Thousand Oaks, CA (US). He has made significant contributions to the field of semiconductor technology. His work primarily focuses on the development of advanced materials and processes that enhance the performance of electronic devices.

Latest Patents

Stanley W. Zehr holds a patent for a process titled "Semi-insulating cobalt doped indium phosphide grown by MOCVD." This innovative process involves growing at least one layer doped with cobalt on a substrate. The method utilizes sources of indium, a group V element, cobalt, and phosphorus, all introduced to the substrate under specific atmospheric conditions. This technique is crucial for creating semi-insulating semiconductor layers, which are essential for various electronic applications. He has 1 patent to his name.

Career Highlights

Throughout his career, Stanley has been associated with Rockwell International Corporation, where he has contributed to various research and development projects. His expertise in semiconductor materials has positioned him as a valuable asset in the field of electronics.

Collaborations

Stanley has worked closely with Kenneth L. Hess, collaborating on projects that push the boundaries of semiconductor technology. Their partnership has led to advancements that benefit the industry.

Conclusion

Stanley W. Zehr's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the development of electronic devices, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
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