The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 1991
Filed:
May. 13, 1988
Applicant:
Inventors:
Kenneth L Hess, Simi Valley, CA (US);
Stanley W Zehr, Thousand Oaks, CA (US);
Assignee:
Rockwell International Corporation, El Segundo, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 81 ; 148D / ; 148D / ; 148D / ; 437 94 ; 437959 ; 437971 ; 156613 ;
Abstract
A process is described for growing at least one layer doped with a transition element of cobalt on a substrate by introducing a source of indium, such as tri ethyl indium, (C.sub.2 H.sub.5).sub.3 In or, a source of a group V element, a source of the transition element, such as cobalt nitrosyl tricarbonyl CO(NO)(CO).sub.3, and a source of phosphorus, to the substrate heated in an inert or reducing atmosphere at a pressure substantially between 1/100 atmosphere and one atmosphere to grow at least one semi-insulating semiconductor layer on the substrate.