Tempe, AZ, United States of America

Stanislau Herasimenka

This inventor holds 3 USPTO granted patents and 4 published patent applications. Top assignee: Arizona State University. Active years: 2017-2019.

USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 1.6

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2017-2019

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3 patents (USPTO):Explore Patents

Title: Innovations by Stanislau Herasimenka

Introduction

Stanislau Herasimenka is an accomplished inventor based in Tempe, AZ (US). He has made significant contributions to the field of solar energy and flexible electronics. With a total of 3 patents, his work focuses on enhancing the efficiency and functionality of solar cells and infrared emitters.

Latest Patents

One of his latest patents is titled "Transparent conductive oxide in silicon heterojunction solar cells." This invention discloses devices and methods for reducing optical losses in transparent conductive oxides (TCOs) used in silicon heterojunction (SHJ) solar cells while enhancing series resistance. The methods include reducing the thickness of TCO layers by about 200% to 300% and depositing hydrogenated dielectric layers on top to form double layers of antireflection coating. It has been discovered that the conductivity of a thin TCO layer can be increased through a hydrogen treatment supplied from the capping dielectric during the post-deposition annealing. The optimized cells with ITO/SiO:H stacks achieved more than 41 mA/cm generation current on 120-micron-thick wafers while having approximately 100 Ohm/square sheet resistance. Furthermore, solar cells and methods may include integration of ITO/SiO:H stacks with Cu plating and the use of ITO/SiN/SiO triple layer antireflection coatings. The experimental data details the improved optics and resistance in cell stacks with varying materials and thicknesses.

Another notable patent is for a "Flexible silicon infrared emitter." This apparatus includes a flexible silicon (Si) substrate, such as a crystalline n-type substrate, and a heterostructure formed on the silicon substrate. The heterojunction structure includes a first layered structure deposited on a first side of the silicon substrate, which consists of a first amorphous intrinsic silicon layer, an amorphous n-type or p-type silicon layer, and a transparent conductive layer. The second layered structure includes a second amorphous intrinsic silicon layer, an amorphous p-type or n-type silicon layer, and a transparent conductive layer. The heterostructure is configured to operate as both a photovoltaic cell and an infrared light-emitting diode.

Career Highlights

Stanislau Herasimenka is affiliated with Arizona State University, where he continues to innovate and contribute to

Profile summary based on public USPTO records.
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