This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025
Title: The Innovations of Sravan K Puchakayala
Introduction
Sravan K Puchakayala is a notable inventor based in Folsom, CA. He has made significant contributions to the field of memory devices, particularly in optimizing the performance of SRAM arrays. His work is characterized by a focus on enhancing the efficiency of electronic components.
Latest Patents
One of his key patents is titled "Apparatus and method to optimize sense-amp enable pulse-width in SRAM arrays." This invention addresses the circuits for optimizing the duration of a sense amp enable signal in memory devices such as SRAM. This innovation is crucial for improving the overall performance and reliability of memory systems.
Career Highlights
Sravan K Puchakayala is currently employed at Intel Corporation, a leading technology company known for its advancements in semiconductor manufacturing. His role at Intel allows him to work on cutting-edge technologies and contribute to the development of innovative solutions in the tech industry.
Collaborations
Throughout his career, Sravan has collaborated with talented individuals such as Gururaj Shamanna and Naveen Kumar M. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.
Conclusion
In summary, Sravan K Puchakayala is an accomplished inventor whose work in optimizing SRAM arrays has made a significant impact in the field of memory devices. His contributions continue to influence advancements in technology and electronic components.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile