Grenoble, France

Sophie Caranhac



Average Co-Inventor Count = 2.3

ph-index = 1

Forward Citations = 4(Granted Patents)


Location History:

  • Uriage, FR (1999)
  • Grenoble, FR (1997 - 2000)

Company Filing History:


Years Active: 1997-2000

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3 patents (USPTO):Explore Patents

Title: Biography of Inventor Sophie Caranhac

Introduction: Sophie Caranhac is a prominent inventor based in Grenoble, France. She has made significant contributions to the field of semiconductor devices, particularly in the development of charge-coupled devices (CCDs). With a total of three patents to her name, her work has had a substantial impact on the technology used in photosensitive image sensors.

Latest Patents: One of her latest patents is focused on a driving-gate charge-coupled device. This CCD type semiconductor device operates in the Multi-Pinned Phase (MPP) mode, which involves high negative polarization of the electrodes during waiting or integration phases. The innovation includes a potential barrier created by a P-type compensating implantation, which enhances charge storage and transfer capacities.

Career Highlights: Throughout her career, Sophie has worked with notable companies such as Thomson-CSF Semiconducteurs Spécifiques and Thomson-CSF. Her expertise in semiconductor technology has positioned her as a key figure in the industry.

Collaborations: Sophie has collaborated with esteemed colleagues, including Yves Thenoz and Jean-Louis Coutures. These partnerships have contributed to her success and the advancement of her inventions.

Conclusion: Sophie Caranhac's contributions to the field of semiconductor devices exemplify her innovative spirit and dedication to technology. Her patents continue to influence the development of advanced imaging systems, showcasing her role as a

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