The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1999
Filed:
Nov. 13, 1998
Sophie Caranhac, Uriage, FR;
Pierre Blanchard, Echirolles, FR;
Thomson-CSF, Paris, FR;
Abstract
The disclosure relates to charge-coupled devices taking the form of shift registers and, more specifically, to those working in the MPP (Multi-Pinned Phase) mode, i.e. with high negative polarisation of the electrodes during the phases of waiting or of integration of integration of the photosensitive charges. These registers use a potential barrier created by a P type compensating implantation in a zone 16 located beneath a first electrode of each stage of the register. This barrier separates the stages from one another. To increase the charge storage capacity during the storage phase and the charge transfer capacity during the transfer, it is provided that the compensating implantation of the zone 16 will extend beneath only one part (and not the totality) of the first electrode of each stage of the register. Application to photosensitive image sensors, analog delay lines, charge-coupled analog memories, working in MPP mode during the waiting phases to limit losses of information due to the dark current. FIG. 4.