Sunnyvale, CA, United States of America

Sooyong Park

This inventor holds 1 USPTO granted patent. Top assignee: Spansion LLC.. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sooyong Park. Retrieved from https://idiyas.com/inventor/sooyong-park-8g2cnbb6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Sooyong Park: Innovator in Non-Volatile Memory Technology

Introduction

Sooyong Park is a notable inventor based in Sunnyvale, CA, who has made significant contributions to the field of non-volatile memory technology. His innovative work has led to the development of a patent that addresses critical aspects of memory device functionality.

Latest Patents

Sooyong Park holds a patent for a non-volatile memory device, a non-volatile memory system, and a control method for the non-volatile memory device. This patent, which includes a unique control method, varies the driving ability of a selector transistor. This transistor selects a diffusion layer in a selected memory cell and a diffusion layer of at least one non-selected memory cell that adjoins the selected memory cell. This innovation is particularly relevant when the selected memory cell transitions from one end of a memory block to another.

Career Highlights

Sooyong Park has been associated with Spansion LLC, where he has utilized his expertise to advance memory technology. His work has been instrumental in enhancing the performance and efficiency of memory devices.

Collaborations

Sooyong Park has collaborated with Shozo Kawabata, contributing to the development of innovative memory solutions.

Conclusion

Sooyong Park's contributions to non-volatile memory technology exemplify the impact of innovative thinking in the field of electronics. His patent reflects a significant advancement that could influence future memory device designs.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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