Spansion Llc.

Sooyong Park

Shozo Kawabata

The control method includes a step of varying driving ability of a selector transistor which selects a diffusion layer in a selected memory cell and a diffusion layer of at least one non-selected memory cell which adjoins to the selected memory cell when the selected memory cell makes transition from a memory cell at one end to a memory cell at other end within a memory block.

Non-volatile memory device, non-volatile memory system and control method for the non-volatile memory device in which driving ability of a selector transistor is varied

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Sunnyvale, CA, United States of America

Sooyong Park