Soon Jong Park

Title: Soon Jong Park: Semiconductor Device Inventor

Introduction

Soon Jong Park is an inventor based in Bucheon-si, South Korea. His work includes semiconductor device designs and manufacturing methods, with a focus on power-device structures. Park is associated with DB HiTek Co., Ltd. and has 3 patents.

Latest Patents

Park’s listed patents address silicon carbide (SiC) power devices and semiconductor layouts.

“Semiconductor Device Including MOSFET Region and Diode Region and Manufacturing Method Thereof” describes a device combining a SiC MOSFET region with an integrated Schottky barrier diode. The disclosed design aims to reduce forward voltage drop, device area, and switching oscillation associated with parasitic inductance.

“Semiconductor Device” describes a substrate with an active cell region and a surrounding termination region. Its structure includes a gate bus positioned outside the active cell region, a gate electrode extending into that region, source regions, insulating layers, and connected gate and source metals. The gate bus and gate electrode are formed on the same layer.

Career Highlights

Park’s patent work reflects an emphasis on semiconductor device architecture and integration. The disclosed designs address electrical performance and layout considerations in power semiconductors.

Collaborations

Park’s listed coworkers include Seung Hyun Kim and Hee Bae Lee. His company affiliation is DB HiTek Co., Ltd.

Conclusion

Soon Jong Park’s two listed patents focus on semiconductor structures, including an integrated SiC MOSFET and diode design, and illustrate his contributions to power-device innovation.