The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Apr. 17, 2023
Applicant:
Db Hitek Co., Ltd., Bucheon-si, KR;
Inventors:
Seung Hyun Kim, Bucheon-si, KR;
Hee Bae Lee, Bucheon-si, KR;
Jae Yuhn Moon, Bucheon-si, KR;
Soon Jong Park, Bucheon-si, KR;
Assignee:
DB HiTek Co., Ltd., Bucheon, KR;
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/80 (2025.01); H10D 8/60 (2025.01); H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10D 64/62 (2025.01); H10D 64/64 (2025.01);
U.S. Cl.
CPC ...
H10D 84/811 (2025.01); H10D 8/60 (2025.01); H10D 30/051 (2025.01); H10D 30/615 (2025.01); H10D 64/62 (2025.01); H10D 64/64 (2025.01);
Abstract
Disclosed are a semiconductor device () including a MOSFET region and an integrated diode region, and a manufacturing method thereof. More particularly, a semiconductor device () including a silicon carbide (SiC) MOSFET region and an integrated Schottky bather diode that reduce forward voltage drop (Vf), device area, and switching oscillation resulting from parasitic inductance are disclosed.