Hee Bae Lee

Title: Hee Bae Lee: Semiconductor Device Inventor

Introduction

Hee Bae Lee is an inventor based in Bucheon-si, South Korea, whose work focuses on semiconductor devices and manufacturing methods. The supplied information lists 3 patents associated with Lee and identifies DB HiTek Co., Ltd. as the company where Lee works.

Latest Patents

Lee’s listed patent work includes “Semiconductor Device Including MOSFET Region and Diode Region and Manufacturing Method Thereof.” The invention describes a silicon carbide (SiC) MOSFET with an integrated Schottky barrier diode, designed to reduce forward voltage drop, device area, and switching oscillation caused by parasitic inductance.

Another listed invention, “Semiconductor Device,” describes a substrate with an active cell region and a surrounding termination region. Its structure includes a gate bus, gate electrode, source region, gate insulating layer, gate metal, and source metal. The gate bus and gate electrode are formed on the same layer.

Career Highlights

Lee’s listed inventions address semiconductor device design and integration, including SiC power devices and gate structures. The supplied information connects this work with DB HiTek Co., Ltd.

Collaborations

The supplied information names Seung Hyun Kim and Jae Yuhn Moon as Lee’s coworkers. It does not specify their roles in the listed inventions.

Conclusion

Hee Bae Lee’s listed patent work centers on semiconductor devices, including integrated MOSFET and diode designs and device structures intended to support efficient fabrication and operation.