Bucheon-si, South Korea

Seung Hyun Kim

This inventor holds 3 USPTO granted patents and 6 published patent applications. Top assignee: Db Hitek Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seung Hyun Kim. Retrieved from https://idiyas.com/inventor/seung-hyun-kim-e174pd3k

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 66.7

Average Co-Inventor Count = 4.4

ph-index = 1


Company Filing History:


Years Active: 2026

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3 patents (USPTO):Explore Patents

Title: Seung Hyun Kim and Semiconductor Device Innovation.

Introduction

Seung Hyun Kim is an inventor based in Bucheon-si, South Korea. His patent work focuses on semiconductor devices and manufacturing methods, including technologies for silicon carbide power devices. He is associated with DB HiTek Co., Ltd.

Latest Patents

Kim’s listed patent portfolio includes 3 patents, covering semiconductor device designs and related manufacturing approaches.

“Semiconductor Device Including MOSFET Region and Diode Region and Manufacturing Method Thereof” describes a silicon carbide (SiC) MOSFET with an integrated Schottky barrier diode. The disclosed design aims to reduce forward voltage drop, device area, and switching oscillation associated with parasitic inductance.

“Semiconductor Device” describes a device with an active region containing an active cell region and a surrounding termination region. Its features include a gate bus, gate electrode, source region, gate insulating layer, gate metal, and source metal. The gate bus and gate electrode are positioned on the same layer.

Career Highlights

Kim’s disclosed inventions address semiconductor device structure and integration. His work includes approaches intended to improve the performance and compactness of power semiconductor devices.

Collaborations

Kim is associated with DB HiTek Co., Ltd. His listed coworkers include Hee Bae Lee and Jae Yuhn Moon.

Conclusion

Seung Hyun Kim’s patent work centers on semiconductor device design, including integrated MOSFET and diode structures and device layouts.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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