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For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Soo-Ho Shin

USPTO Granted Patents = 16

Average Co-Inventor Count = 3.8

ph-index = 4

Forward Citations = 43(Granted Patents)


Location History:

  • Kyungki-do, KR (2007)
  • Yongin, KR (2006 - 2010)
  • Gyeonggi-do, KR (2008 - 2013)
  • Yongin-si, KR (2009 - 2014)

Company Filing History:

goldMedal16 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2006-2014

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16 patents (USPTO):Explore Patents
1. 8873277 - Semiconductor memory device having balancing capacitors (2014-10-28),
2. 8872262 - Semiconductor integrated circuit devices including gates having connection lines thereon (2014-10-28),
3. 8563373 - Semiconductor device having vertical channels and method of manufacturing the same (2013-10-22),
4. 8310859 - Semiconductor memory device having balancing capacitors (2012-11-13),
5. 8183113 - Methods of forming recessed gate structures including blocking members, and methods of forming semiconductor devices having the recessed gate structures (2012-05-22),
6. 7767531 - Method of forming transistor having channel region at sidewall of channel portion hole (2010-08-03),
7. 7749846 - Method of forming contact structure and method of fabricating semiconductor device using the same (2010-07-06),
8. 7745876 - Semiconductor integrated circuit devices including gate patterns having step difference therebetween and a connection line disposed between the gate patterns and methods of fabricating the same (2010-06-29),
9. 7670910 - Method of forming self-aligned inner gate recess channel transistor (2010-03-02),
10. 7629215 - Semiconductor device and method of manufacturing the same (2009-12-08),
11. 7598571 - Semiconductor device having vertical channels and method of manufacturing the same (2009-10-06),
12. 7595529 - Semiconductor integrated circuit devices having upper pattern aligned with lower pattern molded by semiconductor substrate and methods of forming the same (2009-09-29),
13. 7531413 - Method of forming transistor having channel region at sidewall of channel portion hole (2009-05-12),
14. 7413943 - Method of fabricating gate of fin type transistor (2008-08-19),
15. 7279741 - Semiconductor device with increased effective channel length and method of manufacturing the same (2007-10-09),

Title: The Innovations of Soo-Ho Shin

Introduction

Soo-Ho Shin is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work has been instrumental in advancing integrated circuit devices and semiconductor memory devices.

Latest Patents

One of his latest patents involves semiconductor integrated circuit devices that include gates with connection lines. This innovation provides semiconductor IC devices featuring gate patterns with a step difference and connection lines interposed between the gate patterns. The design includes a semiconductor substrate with a peripheral active region, a cell active region, and a device isolation layer. Additionally, he has developed a semiconductor memory device that incorporates balancing capacitors, which enhances the performance of memory cell blocks and edge sense amplifiers.

Career Highlights

Soo-Ho Shin is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His work at Samsung has allowed him to push the boundaries of semiconductor technology and contribute to the development of cutting-edge devices.

Collaborations

Throughout his career, Soo-Ho Shin has collaborated with notable colleagues, including Tae-Young Chung and Yong-sung Kim. These partnerships have fostered innovation and have been crucial in the successful development of various technologies.

Conclusion

Soo-Ho Shin's contributions to semiconductor technology are noteworthy, and his patents reflect his expertise and innovative spirit. His work continues to influence the industry and pave the way for future advancements in electronics.

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