Waterford, NY, United States of America

Songkram Sonny Srivathanakul

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Applied Materials, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Songkram Sonny Srivathanakul. Retrieved from https://idiyas.com/inventor/songkram-sonny-srivathanakul

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Songkram Sonny Srivathanakul: Semiconductor Invention and Patent

Introduction

Songkram Sonny Srivathanakul is an inventor associated with Waterford, New York, and Applied Materials, Inc. His patent work concerns semiconductor device manufacturing, particularly selective epitaxy for forming contacts.

Latest Patents

Srivathanakul is associated with 1 patent, titled “Low-Temperature Selective Epitaxy Contact Approach.” The patent describes a method for manufacturing semiconductor devices. It includes forming doped crystalline and amorphous silicon-containing layers in different regions, then adding undoped capping layers. The amorphous layers are selectively removed relative to the crystalline cap, which is subsequently removed to expose the doped crystalline layer.

Career Highlights

His disclosed invention addresses the formation of semiconductor contacts through selective epitaxial growth and layer removal. This approach distinguishes between source/drain features and field regions during fabrication.

Collaborations

The provided information identifies He Ren and Raman Gaire as Srivathanakul’s coworkers. The patent’s technical subject reflects work in semiconductor manufacturing associated with Applied Materials, Inc.

Conclusion

Songkram Sonny Srivathanakul’s patent focuses on selective epitaxy and silicon-containing layers for semiconductor device manufacturing, highlighting his contribution to this area of innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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