Hong Kong, China

Somen Choudhury

This inventor holds 1 USPTO granted patent. Top assignee: Sae Magnetics (h.k.) Limited. Active years: 2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Somen Choudhury. Retrieved from https://idiyas.com/inventor/somen-choudhury

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Somen Choudhury: Innovator in Thin Film Technology

Introduction

Somen Choudhury is a notable inventor based in Hong Kong, CN. He has made significant contributions to the field of thin film technology, showcasing his innovative spirit through his patented inventions.

Latest Patents

Choudhury holds a patent for a "Thin film forming method and system." This invention involves a method that includes several steps: holding at least one object in a chamber, depositing a film-forming material on the object, and etching the forming material while the deposition is conducted. The unique aspect of this invention is that the depositing and etching processes are controlled to occur simultaneously.

Career Highlights

Somen Choudhury is currently employed at Sae Magnetics (H.K.) Limited, where he continues to develop and refine his innovative ideas. His work in the company has allowed him to explore various applications of thin film technology, contributing to advancements in the field.

Collaborations

Choudhury collaborates with talented coworkers, including Hongxin Fang and HongTao Ma. Their combined expertise fosters a creative environment that enhances the development of new technologies.

Conclusion

Somen Choudhury's contributions to thin film technology exemplify his dedication to innovation. His patented methods and ongoing work at Sae Magnetics (H.K.) Limited highlight his role as a key player in the advancement of this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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