Portland, OR, United States of America

Soley Ozer


Average Co-Inventor Count = 3.3

ph-index = 3

Forward Citations = 45(Granted Patents)


Company Filing History:


Years Active: 2007-2012

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3 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Soley Ozer

Introduction

Soley Ozer is a prominent inventor based in Portland, OR (US). She has made significant contributions to the field of technology, particularly in the area of metal gate structures. With a total of 3 patents to her name, her work has garnered attention in the industry.

Latest Patents

One of Soley Ozer's latest patents is titled "Metal gate structure and method of manufacturing same." This patent outlines a method of manufacturing a metal gate structure that includes providing a substrate with a gate dielectric, a work function metal adjacent to the gate dielectric, and a gate metal adjacent to the work function metal. The process involves selectively forming a sacrificial capping layer centered over the gate metal, followed by the formation of an electrically insulating layer over the sacrificial capping layer. The method further includes selectively removing the sacrificial capping layer to create a trench aligned to the gate metal in the electrically insulating layer, and filling the trench with an electrically insulating material to form an electrically insulating cap centered on the gate metal.

Career Highlights

Soley Ozer is currently employed at Intel Corporation, where she continues to innovate and develop new technologies. Her work at Intel has positioned her as a key player in the advancement of semiconductor technology.

Collaborations

Throughout her career, Soley has collaborated with notable colleagues, including Willy Rachmady and Jason W Klaus. These collaborations have contributed to her success and the development of her innovative patents.

Conclusion

Soley Ozer's contributions to the field of technology through her patents and work at Intel Corporation highlight her role as a leading inventor. Her innovative methods in manufacturing metal gate structures are paving the way for advancements in semiconductor technology.

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