The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
May. 21, 2008
Willy Rachmady, Beaverton, OR (US);
Soley Ozer, Portland, OR (US);
Jason Klaus, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method of manufacturing a metal gate structure includes providing a substrate () having formed thereon a gate dielectric (), a work function metal () adjacent to the gate dielectric, and a gate metal () adjacent to the work function metal; selectively forming a sacrificial capping layer () centered over the gate metal; forming an electrically insulating layer () over the sacrificial capping layer such that the electrically insulating layer at least partially surrounds the sacrificial capping layer; selectively removing the sacrificial capping layer in order to form a trench () aligned to the gate metal in the electrically insulating layer; and filling the trench with an electrically insulating material in order to form an electrically insulating cap () centered on the gate metal.