Sohachi Iwai

Title: Sohachi Iwai and Ultraviolet Light-Emitting Devices

Introduction

Sohachi Iwai is an inventor associated with Wako, Japan, and RIKEN Corporation. His patent work includes a method for producing a p-type semiconductor intended for efficient ultraviolet light emission. The supplied information lists 2 patents.

Latest Patents

Iwai’s listed patent, “Ultraviolet light-emitting device in which p-type semiconductor is used,” addresses the challenge of creating a p-type semiconductor with high conductivity and an emission peak in the ultraviolet region.

The described method controls when a p-type impurity source is supplied during crystal growth. Multiple crystal raw materials are introduced alternately in pulses, and the impurity source is supplied at a specified point in the cycle: at the same time as, or after the start of, selected crystal-material supplies, while preceding the supply of other materials. The approach aims to support efficient light emission from the resulting semiconductor.

The supplied patent information repeats the same title and description, so it is presented here as one distinct patent entry.

Career Highlights

Iwai’s listed invention focuses on semiconductor materials and ultraviolet optoelectronic devices. The patent description emphasizes both the material’s conductivity and its potential to emit ultraviolet light efficiently.

Collaborations

The supplied information identifies Hideki Hirayama and Yoshinobu Aoyagi as Iwai’s coworkers. It does not specify their roles in the patent or describe particular joint projects.

Conclusion

Sohachi Iwai’s listed patent work centers on a crystal-growth technique for p-type semiconductors designed for ultraviolet light-emitting devices.