The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2010

Filed:

Oct. 10, 2007
Applicants:

Hideki Hirayama, Wako, JP;

Sohachi Iwai, Wako, JP;

Yoshinobu Aoyagi, Wako, JP;

Inventors:

Hideki Hirayama, Wako, JP;

Sohachi Iwai, Wako, JP;

Yoshinobu Aoyagi, Wako, JP;

Assignee:

Riken, Saitama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.


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