Shanghai, China

Sitong Bu

This inventor holds 1 USPTO granted patent. Top assignee: Huawei Technologies Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sitong Bu. Retrieved from https://idiyas.com/inventor/sitong-bu-ic01f596

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Sitong Bu - Innovator in Ferroelectric Memory Technology

Introduction

Sitong Bu is a prominent inventor based in Shanghai, China. He is known for his contributions to the field of ferroelectric memory technology. His innovative work has led to the development of a unique storage device that enhances memory capabilities.

Latest Patents

Sitong Bu holds a patent for a ferroelectric memory and storage device. This invention includes at least one storage cell, which comprises a transistor, a first ferroelectric capacitor, and at least one voltage divider capacitor. The transistor features a gate electrode, a source electrode, and a drain electrode. One electrode of the first ferroelectric capacitor is connected to the gate electrode, while the other electrode is linked to a word line. Additionally, each voltage divider capacitor is connected to the gate and source electrodes, enhancing the device's functionality. He has 1 patent to his name.

Career Highlights

Sitong Bu is currently employed at Huawei Technologies Co., Ltd., a leading global technology company. His work at Huawei has allowed him to push the boundaries of memory technology and contribute to advancements in the field.

Collaborations

Some of his notable coworkers include Zhaozhao Hou and Yichen Fang, who have collaborated with him on various projects within the company.

Conclusion

Sitong Bu's innovative contributions to ferroelectric memory technology exemplify the importance of research and development in advancing modern technology. His work continues to influence the field and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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