The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Jul. 26, 2023
Huawei Technologies Co., Ltd., Shenzhen, CN;
Zhaozhao Hou, Shenzhen, CN;
Sitong Bu, Shanghai, CN;
Yichen Fang, Beijing, CN;
Yu Zhang, Shanghai, CN;
Jeffrey Junhao Xu, Shenzhen, CN;
HUAWEI TECHNOLOGIES CO., LTD., Shenzhen, CN;
Abstract
A ferroelectric memory includes at least one storage cell. Each storage cell includes a transistor, a first ferroelectric capacitor, and at least one voltage divider capacitor. The transistor includes a gate electrode, a source electrode, and a drain electrode. One electrode of the first ferroelectric capacitor is connected to the gate electrode. The other electrode of the first ferroelectric capacitor is connected to a word line. One electrode of each voltage divider capacitor in the at least one voltage divider capacitor is connected to the gate electrode, and the other electrode of each voltage divider capacitor in the at least one voltage divider capacitor is connected to the source electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile