Siqi Gao

Title: Siqi Gao - Innovator in Scanning Interference Lithography

Introduction

Siqi Gao is a prominent inventor based in Beijing, China. He has made significant contributions to the field of photolithography, particularly through his innovative patent in scanning interference lithography systems. His work is instrumental in advancing high-precision manufacturing techniques.

Latest Patents

Siqi Gao holds a patent for a "Scanning Interference Lithographic System." This system includes a heterodyne optical path, a first and second interference optical path, a motion platform, and a control subsystem. The substrate is carried on the motion platform, and a displacement measurement interferometer is utilized to measure the platform's displacement. The system focuses two light beams on the substrate for interference exposure. The control subsystem generates instructions based on various measurement information, adjusting angles of corresponding devices or the phase of a light beam. This innovation achieves high precision in fringe pattern locking and a high laser utilization rate, making it suitable for producing large-area high-precision dense grating line gradient periodic gratings.

Career Highlights

Siqi Gao is affiliated with Tsinghua University, where he continues to engage in cutting-edge research and development. His work has garnered attention for its potential applications in various high-tech industries.

Collaborations

Siqi Gao collaborates with notable colleagues, including Leijie Wang and Yu Zhu. Their combined expertise contributes to the advancement of technologies in their respective fields.

Conclusion

Siqi Gao's contributions to scanning interference lithography represent a significant advancement in precision manufacturing. His innovative approach and collaboration with esteemed colleagues position him as a key figure in the field.