Simon P Wainwright

Title: Simon P Wainwright: Innovator in Power Control Circuits

Introduction

Simon P Wainwright is a notable inventor based in Newburyport, MA (US). He has made significant contributions to the field of power control circuits, particularly through his innovative use of gallium nitride (GaN) technology. His work has implications for various applications in electronics and power management.

Latest Patents

Wainwright holds a patent for a "Multi-function power control circuit using enhancement mode gallium nitride (GaN) high electron mobility transistors (HEMTs)." This patent describes a multi-function circuit that includes a low side circuit comprised of a first set of enhancement mode transistors. The half bridge circuit also features a high side circuit made up of a second set of transistors. Each of these transistors is a Gallium Nitride (GaN) transistor, which can be configured and operated as saturated switches. The entire half bridge circuit is constructed from discrete components, showcasing Wainwright's innovative approach to circuit design.

Career Highlights

Wainwright is associated with Freebird Semiconductor Corporation, where he continues to develop cutting-edge technologies in the semiconductor industry. His work focuses on enhancing the efficiency and performance of power control circuits, which are crucial for modern electronic devices.

Collaborations

Wainwright has collaborated with notable colleagues such as Anthony G P Marini and James L Larrauri. These partnerships have contributed to the advancement of technology in the field of power electronics.

Conclusion

Simon P Wainwright is a distinguished inventor whose work in power control circuits exemplifies innovation in the semiconductor industry. His contributions, particularly in the use of GaN technology, are paving the way for more efficient electronic systems.