The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2018

Filed:

Dec. 09, 2016
Applicant:

Freebird Semiconductor Corporation, Haverhill, MA (US);

Inventors:

Anthony G. P. Marini, Clinton, MA (US);

James L. Larrauri, North Port, FL (US);

Simon P. Wainwright, Newburyport, MA (US);

Max Zafrani, Swampscott, MA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 3/158 (2006.01); H02M 1/32 (2007.01); G01R 15/04 (2006.01); G01R 19/165 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H03K 17/0812 (2006.01);
U.S. Cl.
CPC ...
H02M 3/158 (2013.01); G01R 15/04 (2013.01); G01R 19/16504 (2013.01); H01L 29/2003 (2013.01); H01L 29/7783 (2013.01); H02M 1/32 (2013.01); H03K 17/08122 (2013.01);
Abstract

Embodiments of the present disclosure relate to a multi-function circuit. The circuit comprises a low side circuit that is comprised with a first set of enhancement mode transistors. The half bridge circuit also includes a high side circuit that is comprised of a second set of transistors. Each of the enhancement mode transistors of the first set and second set of enhancement mode transistors are Gallium Nitride (GaN) transistors. In some embodiments, the GaN transistors are High Electron Mobility Transistors (HEMTs). In additional embodiments, the GaN transistors are configured and operated as saturated switches. In further embodiments, the half bridge circuit is designed as a discrete circuit. Additionally, each of the first set and second set of transistors, diodes, resistors, and all passive elements are discrete components arranged to form a half bridge circuit. In fact, the entire half bridge circuit is built from discrete components.


Find Patent Forward Citations

Loading…