Company Filing History:
Years Active: 2018
Title: Innovations of James L. Larrauri
Introduction
James L. Larrauri is an accomplished inventor based in North Port, Florida. He has made significant contributions to the field of power control circuits, particularly through his innovative use of gallium nitride (GaN) technology. His work has implications for various applications in electronics and power management.
Latest Patents
James L. Larrauri holds a patent for a multi-function power control circuit utilizing enhancement mode gallium nitride (GaN) high electron mobility transistors (HEMTs). This patent describes a circuit that includes a low side circuit with a first set of enhancement mode transistors and a high side circuit with a second set of transistors. The GaN transistors are configured to operate as saturated switches, and the entire half bridge circuit is constructed from discrete components.
Career Highlights
Larrauri is currently associated with Freebird Semiconductor Corporation, where he continues to develop innovative solutions in semiconductor technology. His expertise in GaN transistors positions him as a key player in advancing power control systems.
Collaborations
Throughout his career, Larrauri has collaborated with notable professionals in the field, including Anthony G. P. Marini and Simon P. Wainwright. These collaborations have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.
Conclusion
James L. Larrauri's contributions to the field of power control circuits exemplify the impact of innovative thinking in technology. His work with gallium nitride transistors is paving the way for advancements in electronic systems.