This inventor holds 1 USPTO granted patent. Top assignee: C2amps Ab. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Simon Olson and Semiconductor Structure Innovation.
Introduction
Simon Olson is an inventor based in Malmö, Sweden. His patent work includes a semiconductor structure designed to form multiple transistors using vertical nanowires.
Latest Patents
Olson is associated with 1 patent, titled “Semiconductor Structure Forming a Plurality of Transistors.” The disclosed structure includes a source layer, vertical nanowires, spacer layers, a gate layer, and a drain layer. Its gate layer has two interleaved gates, each with multiple gate fingers and an interconnecting portion, forming the gates of two separate transistors.
Career Highlights
Olson is associated with C2amps AB. His patent describes an approach to arranging multiple transistor gates around vertical nanowires within a semiconductor structure.
Collaborations
Olson’s listed coworkers include Stefan Andric and Lars-Erik Wernersson.
Conclusion
Simon Olson’s patent work focuses on a nanowire-based semiconductor structure that integrates interleaved gates to form multiple transistors.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile