Hsinchu, Taiwan

Simon-M Sze


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Simon-M Sze: Innovator in Non-Volatile Memory Technology

Introduction

Simon-M Sze is a prominent inventor based in Hsinchu, Taiwan. He is known for his significant contributions to the field of non-volatile memory technology. With a focus on innovative manufacturing methods, Sze has made strides in enhancing the efficiency and effectiveness of memory devices.

Latest Patents

One of Simon-M Sze's notable patents is related to a method of manufacturing a floating gate. This patent, titled "Non-volatile memory and method of manufacturing floating gate," outlines a process that includes forming a tunneling layer on a substrate and creating a film layer containing a semiconductor component on the tunneling layer. The film layer can consist of either a semiconductor film or nano-dots. This innovation is crucial for advancing non-volatile memory technologies.

Career Highlights

Simon-M Sze is affiliated with the National Sun Yat-sen University of Kaohsiung, where he contributes to research and development in semiconductor technologies. His work has garnered attention for its practical applications in the electronics industry.

Collaborations

Some of his notable coworkers include Ting-Chang Chang and Shuo-Ting Yan, who have collaborated with him on various projects related to semiconductor innovations.

Conclusion

In summary, Simon-M Sze is a key figure in the development of non-volatile memory technologies, with a focus on innovative manufacturing methods. His contributions continue to influence the field and pave the way for future advancements.

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