The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2007
Filed:
Aug. 02, 2006
Applicants:
Ting-chang Chang, Hsinchu, TW;
Shuo-ting Yan, Tainan County, TW;
Po-tsun Liu, Hsinchu, TW;
Chi-wen Chen, Chiayi County, TW;
Tsung-ming Tsai, Hsinchu, TW;
Ya-hsiang Tai, Hsinchu, TW;
Simon-m Sze, Hsinchu, TW;
Inventors:
Ting-Chang Chang, Hsinchu, TW;
Shuo-Ting Yan, Tainan County, TW;
Po-Tsun Liu, Hsinchu, TW;
Chi-Wen Chen, Chiayi County, TW;
Tsung-Ming Tsai, Hsinchu, TW;
Ya-Hsiang Tai, Hsinchu, TW;
Simon-M Sze, Hsinchu, TW;
Assignee:
National Sun Yat-sen University, Kaohsiung, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a floating gate is provided. The method includes the steps of forming a tunneling layer on a substrate, and forming a film layer containing a semiconductor component on the tunneling layer. The film layer consists of a semiconductor film or nano-dots.