Sihua Li

Title: Sihua Li: Semiconductor Defect Detection Innovation

Introduction

Sihua Li is an inventor associated with The University of Hong Kong in Hong Kong, China. His patent work addresses the detection of atomic-scale defects during the fabrication of 4H-SiC diodes, a semiconductor technology used in electronic devices.

Latest Patents

Li is associated with 1 patent: “Luminescence Method for the In-Line Detection of Atomic Scale Defects During Fabrication of 4H—SiC Diodes.” The method scans a semiconductor surface with a field-emission scanning electron microscope to create an image. A light detector and monochromator then measure cathodoluminescence across the image, producing a spatial intensity map and spectra that relate intensity to photon energy. By comparing the measured cathodoluminescence intensity with a threshold, the method identifies semiconductors considered defective when their intensity exceeds that threshold.

Career Highlights

This invention combines electron microscopy and cathodoluminescence analysis to support defect detection during semiconductor fabrication. Its in-line approach is designed to help identify defects at the atomic scale in 4H-SiC diode production.

Collaborations

Li’s listed coworkers include Chi Chung Francis Ling and Lok Ping Ho. His association with The University of Hong Kong places his patent work within the university’s research environment.

Conclusion

Sihua Li’s patent presents a luminescence-based method for detecting atomic-scale defects in 4H-SiC semiconductors, connecting imaging and optical analysis to fabrication quality assessment.