The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Oct. 05, 2023
The University of Hong Kong, Hong Kong, CN;
Chi Chung Francis Ling, Hong Kong, CN;
Sihua Li, Hong Kong, CN;
Lok Ping Ho, Hong Kong, CN;
Wing Chong Tony Chau, Hong Kong, CN;
THE UNIVERSITY OF HONG KONG, Hong Kong, CN;
Abstract
A method of detecting atomic scale defects in semiconductors, comprising the steps of scanning the surface of the semiconductor with a field emission scanning electron microscope (SEM) to form an SEM image thereof; scanning the SEM image with a light detector and monochromator to obtain a cathodoluminescence (CL) spatial intensity map of the SEM image; determining the CL spectra, i.e. the CL intensity against photon energy for each integral CL intensity; and comparing the CL intensity to a threshold, whereby those semiconductors whose CL intensity is above the threshold are deemed to be defective.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile