Hong Kong, China

Lok Ping Ho

This inventor holds 1 USPTO granted patent. Top assignee: The University of Hong Kong. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lok Ping Ho. Retrieved from https://idiyas.com/inventor/lok-ping-ho

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Innovations by Lok Ping Ho in Semiconductor Detection

Introduction

Lok Ping Ho is a notable inventor based in Hong Kong, CN. He has made significant contributions to the field of semiconductor technology. His innovative work focuses on the detection of atomic scale defects in semiconductors, which is crucial for the fabrication of high-quality electronic devices.

Latest Patents

Lok Ping Ho holds a patent for a luminescence method designed for the in-line detection of atomic scale defects during the fabrication of 4H—SiC diodes. This method involves scanning the surface of the semiconductor with a field emission scanning electron microscope (SEM) to create an SEM image. The SEM image is then analyzed using a light detector and monochromator to obtain a cathodoluminescence (CL) spatial intensity map. The CL spectra are determined, and the CL intensity is compared to a threshold to identify defective semiconductors. This innovative approach enhances the quality control processes in semiconductor manufacturing.

Career Highlights

Lok Ping Ho is affiliated with The University of Hong Kong, where he continues to advance research in semiconductor technologies. His work has implications for improving the reliability and performance of electronic devices.

Collaborations

He collaborates with esteemed colleagues such as Chi Chung Francis Ling and Sihua Li, contributing to a dynamic research environment focused on semiconductor innovations.

Conclusion

Lok Ping Ho's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work not only enhances the understanding of atomic scale defects but also improves the manufacturing processes of semiconductors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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