Company Filing History:
Years Active: 2021
Title: The Innovations of Sidi Aboujja
Introduction
Sidi Aboujja is a notable inventor based in Lynnfield, MA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of edge-emitting semiconductor lasers. His work has implications for various applications in telecommunications and optoelectronics.
Latest Patents
Sidi Aboujja holds a patent for an innovative AlInGaAs/InGaAsP/InP edge-emitting semiconductor laser. This patent describes a monolithic edge-emitting semiconductor laser that comprises multiple laser diodes utilizing the aluminum indium gallium arsenide phosphide (AlInGaAs/InGaAsP/InP) material system. The laser operates in long wavelengths ranging from 1250 nm to 1720 nm. Each laser diode features an active region made up of aluminum indium gallium arsenide quantum wells (AlInGaAs QW) and aluminum indium gallium arsenide (AlInGaAs) barriers. These diodes are interconnected by a highly doped, low bandgap, and low resistive indium gallium arsenide junction known as a tunnel junction.
Career Highlights
Sidi Aboujja is currently employed at Seminex Corporation, where he continues to advance his research and development efforts in semiconductor technology. His work at the company has positioned him as a key player in the field, contributing to innovations that enhance the performance and efficiency of semiconductor devices.
Collaborations
Sidi Aboujja collaborates with David M Bean, leveraging their combined expertise to push the boundaries of semiconductor technology. Their partnership has led to advancements that benefit both their research and the broader industry.
Conclusion
Sidi Aboujja's contributions to the field of semiconductor lasers exemplify the impact of innovative thinking in technology. His patent and ongoing work at Seminex Corporation highlight the importance of collaboration and research in driving advancements in this critical area.