The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Jun. 02, 2020
Applicant:
Seminex Corporation, Peabody, MA (US);
Inventors:
Sidi Aboujja, Lynnfield, MA (US);
David M. Bean, Middleton, MA (US);
Assignee:
Seminex Corporation, Peabody, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/40 (2006.01); H01S 5/343 (2006.01); H01S 5/30 (2006.01); H01S 5/026 (2006.01); H01S 5/34 (2006.01); H01S 5/024 (2006.01); H01S 5/0234 (2021.01); H01S 5/0237 (2021.01);
U.S. Cl.
CPC ...
H01S 5/4043 (2013.01); H01S 5/026 (2013.01); H01S 5/3054 (2013.01); H01S 5/3095 (2013.01); H01S 5/3409 (2013.01); H01S 5/3416 (2013.01); H01S 5/3434 (2013.01); H01S 5/34306 (2013.01); H01S 5/34313 (2013.01); H01S 5/0234 (2021.01); H01S 5/0237 (2021.01); H01S 5/02469 (2013.01); H01S 5/34366 (2013.01);
Abstract
A monolithic edge emitting semiconductor laser comprising multiple laser diodes using aluminum indium gallium arsenide phosphide AlInGaAs/InGaAsP/InP material system, emitting in long wavelengths (1250 nm to 1720 nm). Each laser diode contains an active region comprising aluminium indium gallium arsenide quantum wells (AlInGaAs QW) and aluminium indium gallium arsenide (AlInGaAs) barriers and connected to the subsequent monolithic laser diode by highly doped, low bandgap and low resistive indium gallium arsenide junction called tunnel junction.