Siddharth G Sundaresan

Title: Innovations of Siddharth G Sundaresan in Semiconductor Nanostructure Fabrication.

Introduction

Siddharth G Sundaresan is an accomplished inventor based in Vienna, VA, known for his significant contributions to the field of semiconductor nanostructure fabrication. With a focus on innovative techniques, he has developed methods that enhance the efficiency and effectiveness of nanostructure growth.

Latest Patents

Sundaresan holds a patent for "Microwave heating for semiconductor nanostructure fabrication." This invention utilizes a microwave heating-based sublimation-sandwich SiC polytype growth method. The process involves creating a sandwich cell with a source wafer and a substrate wafer, applying selective microwave heating, and generating a temperature gradient to facilitate the sublimation of Si- and C-containing species. The resulting vapor species are converted into liquid metallic alloy nanodroplets, which then grow nanostructures on the substrate wafer.

Career Highlights

Throughout his career, Sundaresan has worked with notable organizations, including George Mason Intellectual Properties, Inc. and the National Institute of Standards and Technology (NIST). His experience in these institutions has allowed him to refine his skills and contribute to advancements in semiconductor technology.

Collaborations

Sundaresan has collaborated with esteemed colleagues, including Yonglai Tian and Rao V Mulpuri. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Siddharth G Sundaresan's work in semiconductor nanostructure fabrication exemplifies the impact of innovative thinking in technology. His patented methods and collaborative efforts continue to influence the field, paving the way for future advancements.