Si-Yi Yi Li

Title: Innovations by Si-Yi Yi Li in Atomic Layer Deposition

Introduction

Si-Yi Yi Li is an accomplished inventor based in Fremont, CA, known for her contributions to the field of atomic layer deposition (ALD). With a total of 2 patents, she has made significant advancements in methods and apparatuses aimed at reducing roughness in various applications.

Latest Patents

Her latest patents focus on integrated atomic layer deposition and etch processes designed to minimize surface roughness. The methods described involve depositing a conformal layer on a mask using ALD to achieve a smoother surface. Additionally, the process includes etching a layer beneath the mask to create patterned features with reduced roughness. In some implementations, after etching a substrate to a specific depth, a conformal layer is deposited on the sidewalls of the features to protect them and further reduce roughness during subsequent etching. These innovative processes can be performed in a plasma chamber, showcasing the versatility and effectiveness of her techniques.

Career Highlights

Si-Yi Yi Li is currently employed at Lam Research Corporation, where she continues to push the boundaries of technology in her field. Her work has been instrumental in enhancing the performance and reliability of semiconductor manufacturing processes.

Collaborations

Throughout her career, she has collaborated with notable colleagues, including Xiang Zhou and Naveed Ansari, contributing to a dynamic and innovative work environment.

Conclusion

Si-Yi Yi Li's contributions to atomic layer deposition and etch processes represent a significant advancement in the field, demonstrating her expertise and commitment to innovation. Her work continues to influence the semiconductor industry positively.