Lam Research Corporation

Si-Yi Yi Li

Yoshie Kimura

Ganesh Upadhyaya

Xiang Zhou

Radhika C Mani

Chen Xu

Duming Zhang

Mitchell Brooks

Naveed Ansari

Kazi Sultana

Haseeb Kazi

Methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes are described herein. In some implementations, after a mask is provided on a substrate, methods include depositing a conformal layer on the mask by ALD to reduce roughness and etching a layer underlying the mask to form patterned features having a reduced roughness. In some implementations, after a substrate is etched to a first depth to form features at the first depth in the substrate, methods include depositing a conformal layer by ALD on sidewalls of the features to protect sidewalls and reduce roughness during a subsequent etch process. The ALD and etch processes may be performed in a plasma chamber.

Atomic layer deposition and etch for reducing roughness

Growing community of inventors

Fremont, CA, United States of America

Si-Yi Yi Li