Si Hong Kim

Title: Si Hong Kim: Innovator in Memory Array Technology

Introduction

Si Hong Kim is a notable inventor based in Boise, ID (US). He has made significant contributions to the field of memory technology, holding a total of 7 patents. His work focuses on enhancing the efficiency and performance of memory arrays, which are crucial components in modern computing systems.

Latest Patents

One of Si Hong Kim's latest patents is titled "Memory array with compensated word line access delay." This patent describes systems and methods for sensing an accessed voltage value associated with a memory cell. In various embodiments, a memory array may include a different number of sense components. Each sense component may receive latching signals to latch the accessed voltage value of memory cells based on different timings. For instance, the memory array may latch digit line voltages of memory cells positioned farther from a respective word line driver at a later time based on a latching signal with a higher delay. Such memory arrays may include circuitry to receive and/or generate the delayed latching signals, as well as selection circuitry for latching the digit line voltages based on a selected delayed latching signal.

Another significant patent by Kim is also titled "Memory array with compensated word line access delay." This invention describes systems and methods for sensing an accessed voltage value associated with a memory cell. In different embodiments, a memory array may include a different number of sense amplifiers. Each sense amplifier may include capacitors with varying capacitance values to compensate for differences in received charges associated with similar memory states caused by various circuit delays. For example, memory cells farther from a word line driver may receive activation signals with higher delays, resulting in delayed activation. Consequently, the sense amplifiers may include capacitors with varying capacitance values to compensate for the amount of charge received at a latching time caused by the delayed provision of charges associated with the targeted memory states.

Career Highlights

Si Hong Kim is currently employed at Micron Technology Incorporated, a leading company in semiconductor manufacturing. His work at Micron has allowed him to apply his innovative ideas in a practical setting, contributing to advancements in memory technology.

Collaborations

Throughout his career, Si Hong Kim has collaborated with several talented individuals, including John David Porter and Ki-Jun Nam. These collaborations have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

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