Hiratsuka, Japan

Shyuji Tobashi

This inventor holds 2 USPTO granted patents. Top assignee: Other. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shyuji Tobashi. Retrieved from https://idiyas.com/inventor/shyuji-tobashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Hiratsuka, JP (2002)
  • Shibata, JP (2002)

Company Filing History:

goldMedal2 out of 834,513 
Other
 patents

Years Active: 2002

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2 patents (USPTO):Explore Patents

Title: Profile of Inventor Shyuji Tobashi

Introduction: Shyuji Tobashi is an accomplished inventor based in Hiratsuka, Japan. With a focus on advancements in semiconductor technologies, he holds two patents that reflect his significant contributions to the field.

Latest Patents: Tobashi's latest innovations include:

1. **Apparatus for Reduced-Pressure Epitaxial Growth and Method of Controlling the Apparatus**: This invention presents an apparatus designed for reduced-pressure gaseous phase epitaxial growth. It efficiently suppresses contamination in both the machine parts and the semiconductor wafer by maintaining specific pressure ranges in the rotary mechanical portion. The apparatus features a purging gas introduction pipe, a purging gas exhaust pipe, a pressure adjusting valve, a pressure gauge, and an arithmetic/control unit that ensures optimal pressure conditions.

2. **Method and Apparatus for Controlling Rise and Fall of Temperature in Semiconductor Substrates**: This method aims to regulate the temperature of semiconductor substrates, preventing cracks from occurring due to varying temperature characteristics. The solution involves measuring temperature at multiple points in a heated reactor and selecting an appropriate temperature control program from pre-written options. Additionally, a specialized susceptor is included to minimize contamination from metal impurities during the formation of thin films on semiconductor substrates.

Career Highlights: Shyuji Tobashi has made notable strides in semiconductor manufacturing technology. His patents are pivotal in ensuring higher quality and efficiency in the production of semiconductor devices, contributing to the evolving landscape of electronics.

Collaborations: Throughout his career, Tobashi has collaborated with esteemed colleagues such as Tadashi Ohashi and Katsuyuki Iwata. Their joint efforts underline the collaborative spirit prevalent in the field of semiconductor research and development.

Conclusion: Shyuji Tobashi's expertise and innovations have made significant impacts on the semiconductor industry. His patents reflect a commitment to enhancing technology, ensuring that semiconductor manufacturing can keep pace with ever-growing demands. His work exemplifies the essence of innovation and progress within the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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