The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2002
Filed:
May. 16, 2001
Katsuyuki Iwata, Hamamatsu, JP;
Tadashi Ohashi, Kudamatsu, JP;
Shyuji Tobashi, Hiratsuka, JP;
Shinichi Mitani, Numazu, JP;
Hideki Arai, Numazu, JP;
Hideki Ito, Numazu, JP;
Other;
Abstract
An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie within a particular range, and a method of controlling the above apparatus. The apparatus comprises a purging gas introduction pipe for purging the interior of the rotary mechanical portion, a purging gas exhaust pipe for exhausting the gas introduced through the purging gas introduction pipe, a pressure adjusting valve provided in the purging gas exhaust pipe, a pressure gauge for detecting the pressure in the rotary mechanical portion, and an arithmetic/control unit for executing an arithmetic operation based upon the detected pressure and for controlling the opening degree of the pressure adjusting valve provided in the purging gas exhaust pipe, so that the pressure in the rotary mechanical portion assumes a proper value.