Kawasaki, Japan

Shuzi Nayase

This inventor holds 1 USPTO granted patent. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shuzi Nayase. Retrieved from https://idiyas.com/inventor/shuzi-nayase

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 1996

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Shuzi Nayase: Innovator in Semiconductor Technology

Introduction

Shuzi Nayase is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent that enhances the manufacturing process of semiconductor devices.

Latest Patents

Nayase holds a patent titled "Method for forming resist patterns." This invention discloses a resist that is highly sensitive to ultraviolet rays and ionizing radiation. The resist enables the formation of high-resolution patterns when exposed to these types of radiation. This technology is particularly useful in the manufacturing of semiconductor devices with high integration densities. The resist comprises tert-butoxycarbonyl methoxypolyhydroxystyrene and an o-quinonediazide compound. He has 1 patent to his name.

Career Highlights

Shuzi Nayase is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to focus on advancing semiconductor technologies, contributing to the company's reputation for innovation and excellence.

Collaborations

Nayase has collaborated with notable coworkers, including Yoshihito Kobayashi and Hirokazu Niki. Their combined expertise has fostered a productive environment for innovation and development in semiconductor technologies.

Conclusion

Shuzi Nayase's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the manufacturing processes of high-density semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…