Shuyi Li

Title: Shuyi Li: Innovator in DMOS Device Technology

Introduction

Shuyi Li is a prominent inventor based in Los Gatos, California. She has made significant contributions to the field of semiconductor technology, particularly in the development of double-diffused MOS (DMOS) devices. Her innovative approach has led to advancements that enhance the performance and efficiency of these devices.

Latest Patents

Shuyi Li holds a patent for a method for making DMOS devices that includes a superlattice and field plate for drift region diffusion. This method involves forming a semiconductor layer with a first conductivity type and creating a drift region of a second conductivity type within the semiconductor substrate. The process also includes the formation of spaced-apart source and drain regions, as well as a first superlattice composed of stacked groups of layers. Each group contains base semiconductor monolayers and at least one non-semiconductor monolayer. Additionally, the method incorporates the formation of a gate above the superlattice and a field plate layer adjacent to the drift region, designed to deplete the drift region.

Career Highlights

Shuyi Li has been instrumental in her role at Atomera Incorporated, where she continues to push the boundaries of semiconductor technology. Her work has not only contributed to the company's success but has also positioned her as a leader in the field.

Collaborations

Shuyi collaborates with various professionals in her field, including her coworker Richard Burton. Their combined expertise fosters an environment of innovation and creativity, leading to groundbreaking advancements in semiconductor technology.

Conclusion

Shuyi Li's contributions to the development of DMOS devices exemplify her dedication to innovation in semiconductor technology. Her patent and work at Atomera Incorporated highlight her role as a key figure in advancing this critical field.