Shushu Zheng

Title: Innovations of Shushu Zheng in Semiconductor Technology

Introduction

Shushu Zheng is a notable inventor based in Kawasaki, Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Shushu Zheng holds a patent for a semiconductor device and semiconductor memory device. This invention includes an oxide semiconductor layer, a gate electrode, and a first electrode electrically connected to the oxide semiconductor layer. Additionally, it features a second electrode also connected to the oxide semiconductor layer, along with a first conductive layer positioned between the oxide semiconductor layer and both electrodes. This first conductive layer contains a first metal element, a different first element, and either oxygen or nitrogen. Furthermore, a second conductive layer is situated between the oxide semiconductor layer and the first conductive layer, containing oxygen and a second element distinct from both the first metal element and the first element.

Career Highlights

Shushu Zheng is currently employed at Kioxia Corporation, where he continues to advance his research and development in semiconductor technologies. His work has been instrumental in enhancing the performance and efficiency of semiconductor devices.

Collaborations

Shushu Zheng collaborates with esteemed colleagues such as Junji Kataoka and Tomomasa Ueda, contributing to a dynamic research environment that fosters innovation.

Conclusion

Shushu Zheng's contributions to semiconductor technology through his patent demonstrate his expertise and commitment to advancing the field. His work at Kioxia Corporation and collaborations with fellow inventors highlight the importance of teamwork in driving innovation.