Hsinchu, Taiwan

Shuo-Wei Chen

This inventor holds 1 USPTO granted patent. Top assignee: Epistar Corporation. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shuo-Wei Chen. Retrieved from https://idiyas.com/inventor/shuo-wei-chen-uwrfjitu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Shuo-Wei Chen: Innovator in Semiconductor Technology

Introduction

Shuo-Wei Chen is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that showcases his expertise and creativity.

Latest Patents

Shuo-Wei Chen holds a patent for a semiconductor device. This device includes a first conductive type semiconductor region featuring a first semiconductor structure. The first semiconductor structure consists of one or more pairs of stacks, each containing a first layer and a second layer made of AlGaN. The design incorporates specific doping concentrations and an interface region that enhances the device's performance.

Career Highlights

Shuo-Wei Chen is currently employed at Epistar Corporation, a leading company in the semiconductor industry. His work at Epistar has allowed him to focus on advancing semiconductor technologies and contributing to the company's innovative projects.

Collaborations

Shuo-Wei Chen has collaborated with talented coworkers, including Chang-Hua Hsieh and Chia-Ming Liu. These collaborations have fostered a creative environment that encourages the exchange of ideas and expertise.

Conclusion

Shuo-Wei Chen's contributions to semiconductor technology exemplify his dedication to innovation and excellence. His patent and work at Epistar Corporation highlight his role as a key player in the advancement of this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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