Epistar Corporation

Shuo-Wei Chen

Chia-Ming Liu

Chang-Hua Hsieh

Yen-Kai Yang

Chi-Hsiang Yeh

A semiconductor device, includes: a first conductive type semiconductor region including a first semiconductor structure, wherein the first semiconductor structure includes one or more pairs of stack, the one or more pairs of stack respectively includes a first layer and a second layer, the first layer includes AlGaN, the second layer includes AlGaN, wherein 0≤x<1, 0<y<1, x<y, wherein one of the one or more pairs of stack includes an interface region located between the first layer and the second layer adjacent to the first layer; a second conductive type semiconductor region located on the first conductive type semiconductor region; and an active region located between the first conductive type semiconductor region and the second conductive type semiconductor region; wherein the first semiconductor structure includes a first dopant having a first doping concentration with a peak value at the interface region.

Growing community of inventors

Hsinchu, Taiwan

Shuo-Wei Chen