Tsukuba, Japan

Shunji Wada

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shunji Wada. Retrieved from https://idiyas.com/inventor/shunji-wada-09xcx81a

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:

goldMedal1 out of 834,659 
Other
 patents

Years Active: 2002

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Shunji Wada: Innovator in Vacuum Film Growth Technology

Introduction

Shunji Wada is a notable inventor based in Tsukuba, Japan. He has made significant contributions to the field of vacuum film growth technology. His innovative approach has led to the development of a unique apparatus that enhances the efficiency of plasma beam applications.

Latest Patents

Wada holds a patent for a Vacuum Film Growth Apparatus. This invention features a correction mechanism that includes a magnetic body positioned between a vacuum chamber and a steering coil. The mechanism is designed to correct torsion and/or bias of a plasma beam by utilizing the magnetic force generated from the steering coil.

Career Highlights

Throughout his career, Shunji Wada has focused on advancing technologies related to vacuum film growth. His work has been instrumental in improving the precision and effectiveness of plasma beam applications in various industries.

Collaborations

Wada has collaborated with esteemed colleagues such as Toshiyuki Sakemi and Masaru Tanaka. Their combined expertise has contributed to the success of their projects and innovations.

Conclusion

Shunji Wada's contributions to vacuum film growth technology exemplify the impact of innovative thinking in engineering. His patent and collaborative efforts continue to influence advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…