Yonghe, Taiwan

Shung-Jen Yu

This inventor holds 2 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2000-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shung-Jen Yu. Retrieved from https://idiyas.com/inventor/shung-jen-yu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 26(Granted Patents)


Company Filing History:


Years Active: 2000-2001

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2 patents (USPTO):Explore Patents

Title: Innovations of Shung-Jen Yu in Integrated Circuit Technology

Introduction

Shung-Jen Yu is a notable inventor based in Yonghe, Taiwan. He has made significant contributions to the field of integrated circuits, particularly in the development of high-sheet-resistance polysilicon resistors. With a total of 2 patents to his name, his work has had a considerable impact on semiconductor technology.

Latest Patents

One of Shung-Jen Yu's latest patents is a method for making high-sheet-resistance polysilicon resistors for integrated circuits. This innovative approach utilizes a two-layer polysilicon process. The process begins with the formation of FET gate electrodes and capacitor bottom electrodes from a polycide layer. Following this, a thin interpolysilicon oxide (IPO) layer is deposited to create the capacitor interelectrode dielectric. A doped polysilicon layer and an undoped polysilicon layer are then deposited and patterned to form the resistor. The doped polysilicon layer is in-situ doped to minimize the temperature and voltage coefficients of resistivity. The undoped polysilicon layer, which has a very high resistance, predominantly determines the overall resistance. The thickness of the doped polysilicon layer can be reduced to less than 1000 Angstroms to further increase the sheet resistance for mixed-mode circuits. Additionally, the undoped polysilicon layer allows for contact openings to be etched in an insulating layer over the resistor without damaging the underlying IPO layer.

Career Highlights

Shung-Jen Yu is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate in the semiconductor industry. His work has been instrumental in advancing the technology used in integrated circuits.

Collaborations

Throughout his career, Shung-Jen Yu has collaborated with notable colleagues, including Yu-Ming Tsui and Wen-Cheng Chang. These collaborations have contributed to the success of various projects and innovations in the field.

Conclusion

Shung-Jen Yu's contributions to integrated circuit technology through his patents and collaborations highlight his importance as an inventor in the semiconductor industry. His innovative methods continue to influence the development of advanced electronic components.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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