This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2001.
Company Filing History:
Years Active: 2001
Title: Shung-Bing Yang: Innovator in Bonding Pad Structures
Shung-Bing Yang is a notable inventor based in Hsinchu Hsien, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the design of bonding pad structures. His innovative work has implications for the performance and reliability of integrated circuits.
Latest Patents
Shung-Bing Yang holds a patent for a bonding pad structure. This invention describes a bonding pad that enhances the adhesion between dielectric layers and metal layers. The patent outlines a substrate with integrated circuits, over which a dielectric layer with several trench structures is formed. Each trench is radially arranged, and a conductive layer fills these trenches, establishing electrical connections to the integrated circuits. This design allows for improved mechanical stress distribution, even as wire widths in integrated circuits shrink to sub-micron levels.
Career Highlights
Shung-Bing Yang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this prestigious company has allowed him to contribute to advancements in semiconductor manufacturing processes and technologies.
Collaborations
Throughout his career, Shung-Bing Yang has collaborated with esteemed colleagues, including Min-San Huang and Huan-Sung Fu. These collaborations have fostered innovation and have been instrumental in the development of new technologies in the semiconductor field.
Conclusion
In summary, Shung-Bing Yang is a prominent inventor whose work on bonding pad structures has significantly impacted the semiconductor industry. His contributions continue to influence the design and functionality of integrated circuits.