Hong Kong, China

Shun Yee Lao

This inventor holds 1 USPTO granted patent. Top assignee: Hong Kong Applied Science and Technology Research Institute. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shun Yee Lao. Retrieved from https://idiyas.com/inventor/shun-yee-lao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2018

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1 patent (USPTO):Explore Patents

Title: Shun Yee Lao - Innovator in Electrodeposition Technology

Introduction

Shun Yee Lao is a notable inventor based in Hong Kong, CN. He has made significant contributions to the field of electrodeposition technology. His innovative work has led to the development of a unique plating additive that enhances the electroplating process.

Latest Patents

Shun Yee Lao holds a patent for a "Plating leveler for electrodeposition of copper pillar." This invention provides a plating additive that enables the electroplating of holes on a substrate with excellent height uniformity. The method ensures consistency within features and among features of varying diameters. He has 1 patent to his name.

Career Highlights

Lao is affiliated with the Hong Kong Applied Science and Technology Research Institute. His work at this esteemed institution has allowed him to focus on advancing technology in the field of materials science and engineering.

Collaborations

Shun Yee Lao has collaborated with talented individuals such as Minjie Xu and Yaofeng Sun. Their combined expertise has contributed to the success of various projects within the research institute.

Conclusion

Shun Yee Lao's innovative contributions to electrodeposition technology highlight his role as a key inventor in the field. His work continues to influence advancements in materials science and engineering.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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