Hangzhou, China

Shun Tian

This inventor holds 1 USPTO granted patent. Top assignee: Zhejiang University. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shun Tian. Retrieved from https://idiyas.com/inventor/shun-tian

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Shun Tian: Innovator in Perovskite Light-Emitting Diodes

Introduction

Shun Tian is a prominent inventor based in Hangzhou, China. He has made significant contributions to the field of optoelectronics, particularly in the development of light-emitting diodes. His innovative work has garnered attention in the scientific community.

Latest Patents

Shun Tian holds a patent for a mini/micro perovskite light-emitting diode and its manufacturing method. This optoelectronic device features a semiconductor substrate with a first transport layer and an insulation layer, allowing for adjustable characteristics of light-emitting pixels. The invention represents a significant advancement in the efficiency and functionality of light-emitting diodes.

Career Highlights

Shun Tian is affiliated with Zhejiang University, where he continues to engage in cutting-edge research. His work has not only contributed to academic knowledge but also has practical applications in various technologies.

Collaborations

Shun Tian has collaborated with notable colleagues, including Baodan Zhao and Yaxiao Lian. These partnerships have fostered a collaborative environment that enhances innovation and research output.

Conclusion

Shun Tian's contributions to the field of optoelectronics, particularly through his patent on perovskite light-emitting diodes, highlight his role as a leading inventor. His work continues to influence advancements in technology and research.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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