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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11818941 B1

PDFFull Text
Date of Patent:
Nov. 14, 2023

Filed:

Nov. 30, 2022

Mini/micro perovskite light-emitting diode and manufacturing method thereof

Applicant:

Zhejiang University, Hangzhou, CN;

Inventors:

Dawei Di, Hangzhou, CN;

Yaxiao Lian, Hangzhou, CN;

Chungen Hsu, Hangzhou, CN;

Shun Tian, Hangzhou, CN;

Baodan Zhao, Hangzhou, CN;

Assignee:

ZHEJIANG UNIVERSITY, Hangzhou, CN;

Attorney:
Primary Examiner:

Dzung Tran

Int. Cl.
CPC ...
H10K 71/00 (2023.01); H10K 59/122 (2023.01); H10K 50/135 (2023.01); H10K 50/16 (2023.01); H10K 50/15 (2023.01); H10K 71/20 (2023.01); H10K 59/12 (2023.01);
U.S. Cl.
CPC ...
H10K 71/00 (2023.02); H10K 50/135 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 59/122 (2023.02); H10K 71/221 (2023.02); H10K 59/1201 (2023.02);
Abstract

An optoelectronic device includes a semiconductor substrate, wherein a first transport layer is formed on a first partial region of the semiconductor substrate; a first insulation layer is formed on a second partial region around the first partial region; the first transport layer is formed on the first insulation layer; an interface layer is formed on the first transport layer; a light-emitting material layer containing perovskite material is formed on the interface layer; a second insulation layer is formed on the light-emitting material layer in the second partial region and on the light-emitting material layer near a second partial region side in the first partial region, so that the characteristic size of a single light-emitting pixel or effective working region is adjustable.

Find Patent Forward Citations

Di, Dawei. (2023). Mini/micro perovskite light-emitting diode and manufacturing method thereof (U.S. Patent No. 11818941). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11818941

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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